英飛凌IGBT模塊BSM300GB120DLC IGBT（Insulated Gate Bipolar Transistor），絕緣柵雙極型晶體管，是由BJT（雙極型三極管）和MOS（絕緣柵型場效應管）組成的復合全控型電壓驅(qū)動式功率半導體器件, 兼有MOSFET的高輸入阻抗和GTR的低導通壓降兩方面的優(yōu)點。

產(chǎn)品型號：BSM300GB120DLC
廠商性質(zhì)：經(jīng)銷商
更新時間：2024-01-19
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詳細介紹

北京京誠宏泰科技原裝正品現(xiàn)貨銷售英飛凌IGBT模塊BSM300GB120DLC

集電極—射極擊穿電壓: 1200 V

集電極—射極飽和電壓: 3.2 V

集電極zui大連續(xù)電流 Ic: 300 A

柵極—射極漏泄電流: 400 nA

功率耗散: 1.4 KW

封裝 / 箱體: IS5a ( 62 mm )

集電極—發(fā)射極zui大電壓 VCEO: 1200 V

柵極/發(fā)射極zui大電壓: 20 V

zui大工作溫度: + 125℃

zui小工作溫度: - 40℃

北京京誠宏泰科技原裝正品現(xiàn)貨銷售英飛凌各系列功率模塊：IGBT模塊；PIM模塊；可控硅模塊；整流橋模塊；二極管模塊

BSM50GB60DLC 50A/600V/2U
BSM75GB170DN2 75A/1700V/2U
BSM75GB60DLC 75A/600V/2U
BSM100GB170DN2 100A/1700V/2U
BSM100GB60DLC 100A/600V/2U
BSM150GB170DN2 150A/1700V/2U
BSM150GB60DLC 150A/600V/2U
BSM200GB170DLC 200A/1700V/2U
BSM200GB60DLC 200A/600V/2U
BSM25GAL120DN2 25A/1200V/2U
BSM300GB60DLC 300A/600V/2U
BSM50GAL120DN2 50A/1200V/2U
BSM25GB120DN2 25A/1200V/2U
BSM75GAL120DN2 75A/1200V/2U
BSM35GB120DN2 35A/1200V/2U
BSM100GAL120DN2 100A/1200V/2U
BSM50GB120DN2 50A/1200V/2U
BSM150GAL120DN2 150A/1200V/2U
BSM75GB120DN2 75A/1200V/2U
BSM200GAL120DN2 200A/1200V/2U
BSM100GB120DN2K 100A/1200V/2U
BSM300GAL120DN2 300A/1200V/2U
BSM35GB120DLC 35A/1200V/2U
BSM100GAL120DLCK 100A/1200V/2U
BSM50GB120DLC 50A/1200V/2U
BSM150GAL120DLC 150A/1200V/2U
BSM75GB120DLC 75A/1200V/2U
BSM200GAL120DLC 200A/1200V/2U
BSM150GB170DLC 150A/1700V/2U
BSM300GAL120DLC 300A/1200V/2U
BSM100GB120DN2 100A/1200V/2U
BSM75GAR120DN2 75A/1200V/2U
BSM150GB120DN2 150A/1200V/2U
BSM100GAR120DN2 100A/1200V/2U
BSM200GB120DN2 200A/1200V/2U
BSM150GAR120DN2 150A/1200V/2U
BSM300GB120DN2 300A/1200V/2U
BSM200GAR120DN2 200A/1200V/2U
BSM100GB120(DLC 100A/1200V/2U
BSM200GB120DLC 200A/1200V/2U
BSM150GB120DLC 150A/1200V/2U
BSM300GB120DLC 300A/1200V/2U
BSM50GB170DN2 50A/1700V/2U
BSM300GAR120DN2 300A/1200V/2U
BSM100GB120DLCK 100A/100V/2U